Gallium Nitride (GaN)

Gallium Nitride is emerging as a leading technology for high power, high frequency semiconductor applications. Gallium Nitride exhibits several characteristics that approach the performance of an ideal semiconductor substrate:

• High breakdown voltage
• High power density
• High frequency operation
• High Efficiency
• Good thermal conductivity properties

Though there are several competing technologis that can match some of the capabilities of Gallium Nitride (GaN), GaN has several advantages over legacy RF technologies:

1. High Breakdown Voltage
2. Enhances Carrier Density and Saturation Velocity
3. Enables Higher operating Junction Temperatures

Further, since most GaN is Grown on semi-insulating substrates, parasitic losses are diminished, compared with other technologies. the result? High power density and high power output over a wide bandwidth and improved performance for a variety of applications.

There has been much debate in the industry about the use of LDMOS versus GaN for high power applications. while LDMOS dose have a manufacturability advantage (LDMOS is fabricated on silicon wafers), the performance of LDMOS cannot match that of GaN. A comparison table is shown below.

GaN vs LDMOS Comparison

With over 30 years of experience in the RF industry, Technalogix has maintained a reputation for quality and reliability. Technalogix is located in the heart of Central Alberta. 100% of our transmitters are designed, manufactured and assembled in Canada. We build modulators, digital & analog TV transmitters, ISM amplifiers and much more. Browse from the list of RF equipment below and find the right tool for your needs.